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Science at the Edge
Engineering Seminar
November
13th,
2015
11:30
a.m., Room1400
Biomedical and
Refreshments
served
at 11:15 a.m.
Ali
Javey
Electrical Engineering and
Computer Sciences
University of California,
Berkeley
2D Semiconductor
Electronics:
Advances, Challenges and Opportunities
Abstract
Two-dimensional (2-D) semiconductors exhibit
excellent
device characteristics, as well as novel optical, electrical,
and
optoelectronic characteristics. In this talk, I will present our
recent
advancements in defect passivation, contact engineering, surface
charge
transfer doping, and heterostructure devices of layered
chalcogenides. We have
developed a defect repair/passivation
technique that allows for observation of near-unity quantum
yield in monolayer
MoS2. The work presents the first demonstration of an
optoelectronically perfect monolayer. Forming Ohmic contacts for
both electrons
and holes is necessary in order to exploit the performance
limits of enabled
devices while shedding light on the intrinsic properties of a
material system.
In this regard, we have developed different strategies,
including the use of
surface charge transfer doping at the contacts to thin down the
Schottky
barriers, thereby, enabling efficient injection of electrons or
holes. We have been able
to show high performance n-
and p-FETs with various 2D materials.
Additionally, I will discuss the use of layered
chalcogenides for
various heterostructure device applications, exploiting charge
transfer at the
van der Waals heterointerfaces. I will also present progress
towards achieving
tunnel transistors using layered semiconductors.
For further
information
please contact Prof. Richard Lunt, Department of Chemical
Engineering and
Materials Science at [log in to unmask]
Persons with disabilities have the right
to request and
receive reasonable accommodation. Please call the Department of
Chemical
Engineering and Materials Science at 355-5135 at least one day
prior to the
seminar; requests received after this date will be met when
possible.